Direct optical injection locking of 20 GHz superlattice oscillators

For the first time, a direct optically injection-locked oscillator based on the Esaki-Tsu effect in superlattices is reported. The microwave output power is -7 dBm at 20 GHz with an optical input power of -10 dBm at a wavelength of 1.3 μm     

A novel dynamic survivable routing in WDM optical networks with/without sparse wavelength conversion

In this paper, we study the dynamic survivable routing problem, both in optical networks without wavelength conversion and in optical networks with sparse wavelength conversion, and propose a novel hybrid algorithm for it based on the combination of mobile agents technique and genetic algorithms (GA). By keeping a suitable number of mobile agents in the network to cooperatively explore the network states and continuously report cycles (that are formed by two disjoint-link routes) into the routing tables, our new hybrid algorithm can promptly determine the first population of cycles for a new request based on the routing table of its source node, without the time consuming process associated with current GA-based lightpath protection schemes. We further improve the performance of our algorithm by introducing a more advanced fitness function that is suitable for both the above networks. Extensive simulation studies on the ns-2 network simulator show that our hybrid algorithm achieves a significantly lower blocking probability than the conventional survivable routing algorithms for all the cases we studied.     

Contribution a l'etude du polymorphisme de Ga2S3: Structure cristalline de Mn0,23Ga1,85S3

The Mn_0.23Ga_1.85S₃ phase belongs to the solid solution $\text{ф}{}_0$, stable at low temperature in the Ga₂S₃MnS system. It is hexagonal superstructure of the wurtzite, with the Ga₂S₃α′ type ($\text{a}\text{= 6.397}\text{A}\text{?}$; $\text{c}\text{= 18.027}\text{A}\text{?}$Z = 6; space groupe P6₁ or P6₅). Its crystal structure has been refined by the least squares method to a final R = 0.06 with 323 independant reflections. This structure is closely related to Ga₂S₃ α described by Hahn and Frank, and differs only by the partial occupation of the vacant metal site of Ga₂S₃ by Mn atoms in statistical disorder.     

强化措施抓好落实全面推进农村饮水安全工作

民以食为天，食以水为先。获得安全饮用水是人类生存的基本需求。 党中央、国务院领导高度重视饮水安全工作，要求把“切实保护好饮用水源，让群众喝上放心水”作为首要任务，把“让人民群众喝上干净的水、呼吸清新的空气，有更好的工作和生活环境”作为政府工作的目标。     

Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-/spl mu/m laser for metropolitan applications

Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T/sub 0/. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25/spl deg/C-85/spl deg/C. Besides transmission is demonstrated up to 10 Gb/s at 25/spl deg/C on the same fiber, without penalty and bit-error-rate floor.     

Formal techniques for performance analysis: blending SAN and PEPA

In this paper we consider two performance modelling techniques from the perspectives of model construction, generation of an underlying continuous time Markov process, and the potential for reduction in the Markov process. Such careful comparison of modelling techniques allows us to appreciate the strengths and weaknesses of different approaches, and facilitates cross-fertilization between them. In the present case we take a characteristic of one formalism, functional rates in Stochastic Automata Networks, and introduce it to the other formalism, Performance Evaluation Process Algebra. We investigate the benefits of this cross-fertilization, particularly from the perspectives of Markov process generation and reduction.     

Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon

In this work we present a bulk silicon technology platform able to cointegrate gate-all-around (GAA) MOSFETs and local SOI waveguides with pentagonal cross section. Wire diagonals of 100-800 nm are obtained using a lithographic resolution of 0.8 mum. Well-functioning triangular multigate MOSFETs are reported, and tested up to 150 degC. A significant increase is observed in the low-field mobility mu₀ for small devices (W_effles500 nm), which is attributed to local volume inversion in the corners. Preliminary characterization of the optical waveguides is carried out, showing optical losses of a few dB/cm. The processing is entirely CMOS compatible, does not require access to advanced lithography equipment, and is based on a silicon bulk substrate. Thus, this technology might serve as the basis for a low-cost, high-performance optical signaling platform     

Control of Wind-Induced Self-Excited Oscillations by Transfer of Internal Energy to Higher Modes of Vibration. II: Application to Taut Cables

In Part I of this paper, a theoretical basis is presented using a two-degrees-of-freedom model. In this second part of the study, the passive control and the two types of semiactive controls introduced in Part I are examined numerically for a taut cable experiencing wind-induced galloping motion. The passive and the semiactive control schemes for taut cables show a good similarity with the results obtained for the two-degrees-of-freedom model. The potential of using these control schemes in practical applications to flexible structures is demonstrated.     

On teletraffic applications to OBS

We provide teletraffic models for loss probability evaluation of optical burst switching (OBS). We show that the popular Engset formula is not exact for OBS modeling and demonstrate that in certain cases it is not appropriate. A new exact model is provided. The various models are compared using numerical results for various OBS alternatives with and without burst segmentation.